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  • Silicon Schottky N-Type Diodes: Medium Barrier

  • 供应商:

    Metelics
  • 描述:

    The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

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The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

 

  • VF, RD and CJ matching options.
  • Chip, beam lead or packaged devices.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available.
  •   Spice Model

 

VF @ 1 mA = 350 ~ 450 mV, VBR @ 10 mA = 3 V min.

Chip and Beam Lead

Model

Configuration

CJ

RD

RS

FCO

Package

TYP

pF

MAX

pF

MAX ?

TYP

TYP GHz

MSS40,045-C15

Single Junction

0.09

0.12

15

7

253

C15

MSS40,048-C15

Single Junction

0.12

0.15

15

7

190

C15

MSS40,141-B10B

Single Junction

0.06

0.10

22

10

265

B10B

MSS40,148-B10B

Single Junction

0.12

0.15

17

7

190

B10B

MSS40,155-B10B

Single Junction

0.25

0.30

13

5

127

B10B

MSS40,244-B20

Series Tee

0.08

0.12

22

19

105

B20

MSS40,248-B20

Series Tee

0.12

0.15

17

10

133

B20

MSS40,255-B20

Series Tee

0.25

0.30

15

5

127

B20

MSS40,448-B42

Ring Quad

0.12

0.15

17

7

190

B42

MSS40,455-B40

Ring Quad

0.25

0.30

17

5

127

B40

MSS40,B46-B45

Bridge Quad

0.10

0.13

25

15

106

B45

MSS40,B53-B45

Bridge Quad

0.20

0.25

15

5

160

B45

MSS40,CR46-B49

Crossover Ring Quad

0.09

0.125

22

10

177

B49

MSS40,CR53-B49

Crossover Ring Quad

0.15

0.25

15

5

212

B49

MSS40,PCR46-B47

Coplanar Ring Quad

0.07

0.13

22

10

227

B47

MSS40,PCR53-B47

Coplanar Ring Quad

0.15

0.25

15

5

212

B47

MSS40,PCB46-B48

Coplanar Bridge Quad

0.08

0.12

20

7

190

B48

Test Conditions

VR = 0 V

F = 1 MHz

IF = 5 mA

 

 

 

VF @ 1 mA = 350 ~ 450 mV, VBR = @ 10 mA 3 V min.

Packaged

Model

Configuration

CT

Rd

CP

LP

Package

TYP

pF

MAX

pF

MAX ?

TYP

pF

TYP nH

MSS40,045-P55

Single Junction

0.22

0.28

15

0.13

0.35

P55

MSS40,045-P86

Single Junction

0.24

0.30

15

0.15

1.0

P86

MSS40,048-P55

Single Junction

0.25

0.30

15

0.13

0.35

P55

MSS40,048-P86

Single Junction

0.27

0.33

15

0.15

1.0

P86

MSS40,141-E25

Single Junction

0.13

0.22

18

0.07

0.4

E25

MSS40,141-H20

Single Junction

0.24

0.30

18

0.18

0.5

H20

MSS40,141-0402

Single Junction

0.11

0.18

18

0.05

0.25

0402

MSS40,148-E25

Single Junction

0.19

0.28

15

0.07

0.4

E25

MSS40,148-H20

Single Junction

0.30

0.36

15

0.18

0.5

H20

MSS40,148-0402

Single Junction

017

0.24

15

0.05

0.25

0402

MSS40,155-E25

Single Junction

0.32

0.41

14

0.07

0.4

E25

MSS40,155-H20

Single Junction

0.43

0.51

14

0.18

0.5

H20

MSS40,155-0402

Single Junction

030

0.38

14

0.05

0.25

0402

MSS40,244-E35

Series Tee

0.15

0.24

28

0.07

0.4

E35

MSS40,244-0805-4

Series Tee

0.29

0.36

28

0.06

0.4

0805-4

MSS40,248-E35

Series Tee

0.19

0.28

18

0.07

0.4

E35

MSS40,248-0805-4

Series Tee

0.18

0.25

18

0.06

0.4

0805-4

MSS40,255-E35

Series Tee

0.32

0.41

14

0.07

0.4

E35

MSS40,255-0805-4

Series Tee

0.17

0.40

14

0.06

0.4

0805-4

MSS40,448-E45

Ring Quad

0.19

0.25

15

0.07

0.4

E45

MSS40,448-H40

Ring Quad

0.30

0.36

15

0.18

0.5

H40

MSS40,455-E45

Ring Quad

0.32

0.40

14

0.07

0.4

E45

MSS40,455-H40

Ring Quad

0.42

0.52

14

0.18

0.5

H40

MSS40,B46-E45

Bridge Quad

0.17

0.24

25

0.07

0.4

E45

MSS40,B53-E45

Bridge Quad

0.27

0.36

15

0.07

0.4

E45

MSS40,CR46-E45

Crossover Ring Quad

0.16

0.23

15

0.07

0.4

E45

MSS40,CR46-H40

Crossover Ring Quad

0.27

0.35

15

0.18

0.5

H40

MSS40,CR53-E45

Crossover Ring Quad

0.22

0.35

15

0.07

0.4

E45

MSS40,CR53-H40

Crossover Ring Quad

0.33

0.46

15

0.18

0.5

H40

Test Conditions

VR = 0 V

F = 1 MHz

IF = 5 mA

 

                 

 

Maximum Ratings

Parameters

Rating

 

Reverse Voltage

Rated Vbr

 

Forward Current

50 mA

 

Operation Temperature

-65° C to +150° C

 

Storage Temperature

-65° C to +150° C

 

Power Dissipation

150 mW per junction at Ta= 25° C, derate linearly to zero at Ta= +150°C

 

Soldering Temperature (Packaged)

+260° C for 5 sec.

 

Beam Lead Pull Strength

4 grams minimum

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