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  • Silicon PIN Diodes: High Power Switching & Attenuation

  • 供应商:

    Metelics
  • 描述:

    The Aeroflex / Metelics MPN-7000 Series and MMP-7000 Series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate.

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The Aeroflex / Metelics MPN-7000 Series and MMP-7000 Series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a grown junction P++ layer, MMP-7000 Series PIN diodes yield a very abrupt structured “I” region with minimum outdoping and low voltage punch-through characteristics.

 

Our high temperature passivation and state-of-the-art metallization produce diodes that are designed to cover a wide range of applications that fall into the general categories of switching, phase switching, attenuating and limiting. These devices are rugged and able to meet all visual criteria in space and military applications.

 

  • High Temperature Passivation for Reliability
  • Grown Junction for sharp “I” Region Interface
  • Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available
  • Lot Traceability and Lot Control, Assuring High Reproducibility

 

 

High Power Switching and Attenuation

Chips

Model

VBR

CJ

RS

t

I-layer

Contact

?JC

Package

 

MIN V

TYP pF

MAX pF

TYP ?

MAX ?

TYP

µs

NOM microns

MIN mils

MAX ºC / W

MPN7330

300

0.30

0.40

0.3

0.5

0.5

30

10

10

C40

MPN7345

300

0.30

0.40

0.3

0.5

0.5

45

10

10

C40

MPN7453A

300

0.10

0.15

0.7

1.0

0.7

60

8

20

C22

MPN7453B

400

0.15

0.2

0.6

0.9

2.5

60

8

20

C22

MPN7453C

300

0.18

0.25

0.4

0.7

1.0

60

8

15

C22

MPN7360

600

0.80

1.0

0.2

0.4

2.5

60

20

7

C37

MPN7370

700

2.00

2.3

0.2

0.3

5.0

70

40

5

C39

MPN7380

800

0.40

0.60

0.3

0.5

2.5

80

24

7

C38

MPN7420

400

0.06

0.08

1.0

1.5

1.0

100

5

30

C12

MPN73100

600

0.20

0.30

0.5

0.8

2.2

100

12

10

C32

MPN73120

700

0.30

0.40

0.5

0.8

3.5

120

15

10

C32

Test Conditions

IR = 10 µA

VR = 50 V

F = 1 MHz

IF = 100 mA

F = 100 MHz

IF = 10 mA IR = 6 mA

 

 

High Power Switching and Attenuation

Model

VBR

CJ

Tl

Rs

Rs

Rs

ØJC

MIN V

MAX pF

TYP μs

MAX ?

MAX ?

TYP ?

MAX °C/W

MMP7060

250

0.05

1.0

25

10.0

2.0

20

MMP7061

250

0.08

1.0

20

8.0

1.5

20

MMP7062

250

0.1

1.0

15

6.0

1.2

20

MMP7063

250

0.2

1.0

8

3.5

1.0

15

MMP7064

250

0.3

1.5

6

2.0

0.8

15

MMP7065

500

0.08

1.5

40

8.0

1.5

15

MMP7066

500

0.1

1.5

15

5.0

1.2

15

MMP7067

500

0.2

1.5

10

4.0

1.0

12

MMP7068

500

0.3

2.0

8

3.5

0.8

10

MMP7069

500

0.5

2.0

6

2.0

0.7

10

Test Conditions

@ 10 mA

@ -10V, 1 MHz

IF = 10 mA

IR = 10 mA

@ 1 mA,

100 MHz

@ 10 mA,

100 MHz

@ 100 mA,

100 MHz

pulsed

 

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