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  • Silicon PIN Diodes: Ultrafast & Fast Switching, Low Power

  • 供应商:

    Metelics
  • 描述:

    The Aeroflex / Metelics MPN-7000 Series and MMP-7000 Series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate.

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The Aeroflex / Metelics MPN-7000 Series and MMP-7000 Series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a grown junction P++ layer, MMP-7000 Series PIN diodes yield a very abrupt structured “I” region with minimum outdoping and low voltage punch-through characteristics.

 

Our high temperature passivation and state-of-the-art metallization produce diodes that are designed to cover a wide range of applications that fall into the general categories of switching, phase switching, attenuating and limiting. These devices are rugged and able to meet all visual criteria in space and military applications.

 

  • High Temperature Passivation for Reliability
  • Grown Junction for sharp “I” Region Interface
  • Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available
  • Lot Traceability and Lot Control, Assuring High Reproducibility

 

 

Ultra Fast Switching

Model

VBR

CJ

Tl

ØJC

TS

Rs

Rs

MIN V

MAX pF

TYP nS

MAX °C/W

MAX nS

MAX ?

TYP ?

MMP7010

25

0.1

10

60

1.5

0.7

1.0

MMP7011

25

0.15

10

50

1.5

0.55

0.8

MMP7012

25

0.2

10

40

1.5

0.45

0.7

MMP7013

25

0.25

10

35

1.5

0.4

0.6

Test Conditions

@ 10 mA

@ -10 V, 1 MHz

IF = 10 mA
I
R = 6 mA

pulsed

90% to 10% and 10% to 90% transmission. Drive output = +2- mA and -4 V, 200 mA spike with a rise time of 2 nS

50 mA @
1 GHz

10 mA @
1 GHz

 

Fast Switching, Low Power

Model

VBR

CJ

Tl

DJC

TS

Rs

Rs

MIN V

MAX pF

TYP nS

MAX °C/W

MAX nS

MAX ?

TYP ?

MMP7020

70

0.05

60

80

5

0.9

1.2

MMP7021

70

0.1

60

70

5

0.7

1.0

MMP7022

70

0.15

60

60

5

0.6

0.9

MMP7023

70

0.2

60

55

5

0.5

0.7

MMP7024

70

0.25

60

50

5

0.45

0.5

MMP7025

100

0.03

100

90

10

1.2

1.9

MMP7026

100

0.07

100

80

10

0.9

1.5

MMP7027

100

0.1

100

70

10

0.7

1.2

MMP7028

100

0.15

100

60

10

0.6

1.0

MMP7029

100

0.2

100

55

10

0.5

0.9

MMP7030

100

0.3

100

50

15

0.45

0.8

MMP7031

200

0.03

225

90

15

1.9

3.0

MMP7032

200

0.07

225

80

15

1.2

2.2

MMP7033

200

0.1

225

70

15

0.9

1.6

MMP7034

200

0.15

225

60

15

0.8

1.0

MMP7035

200

0.2

225

55

15

0.7

0.8

MMP7036

200

0.3

225

50

15

0.6

0.7

Test Conditions

@ 10 mA

@ -10 V, 1 MHz

IF = 10 mA

IR = 6mA

pulsed

90% to 10% and 10% to 90% transmission. Drive output = +2- mA and -4 volts, 200 mA spike with a rise time of 2 nS

75 mA
@ 1 GHz

20 mA
@ 1 GHz

 

Maximum Ratings

Parameters

Rating

 

Operating Temperature

-55° C to + 150° C

 

Storage Temperature

-65° C to + 200° C

 

Reverse Breakdown

from 25 volts to 500 volts

 

Voltage

volts at 10 mA

 

Junction Capacitance

(Cj-10) from 0.03 pF to 0.5 pF at 10 volts

 

Switching Speed

from 1 nS to 25 nS

 

Lifetime

from 5 nS to 6.0 mS

 

Chip Thickness

.004 – .007” thick

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