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  • MICROWAVE SWITCHING DIODES FROM 1 to 40 GHz

  • 供应商:

    InsightProduct   
  • 描述:

    Insight Product Company offers Microwave Switching Diodes with switching time up to 3 nsec and operating in frequency range from 1 to 40 GHz.

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  Insight Product Company offers Microwave Switching Diodes with switching time up to 3 nsec and operating in frequency range from 1 to 40 GHz. The p+ -n - n+ silicon spackage-less switching diodes are designed to be used in microwave switching devices, phase changers, modulators, microwave attenuators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
  The package-less gold-beam-lead diode is protected with a high-temperature silicon compound.
  Performance:

 

Total diode capacitance (at reverse voltage 10V), pF*

0.03 - 0.20

Forward loss resistance (at  forward current 10mA), Ohm

0.7-3.0

Forward voltage (at forward current 10mA), V

<=0.9

Switching time, nsec*

3-50

Diode lead inductance, nH

<=0.15

Operating frequency, GHz

1-40

Features
Mesastructure
Protection with silicon organic compound
Flexible gold beam-leads
Application
Microwave Si chip high-speed switching diodes with p+-i-n+ structure are designed to operate in switching devices, phase shifters, modulators, attenuators in frequency range 0.1-40 GHz. Diodes included in HIC, microcircuits, micro packs and units of radio engineering and electronic equipment are intended for a wide general-purpose industrial application.
Electrical Specification

 

 

Model number

Total 
Capacitance, 
@ UR=0 Volts(pF)

Maximum Forward Resistance @
10 mA, 3.5 GHz
(Ohms)

Minimum Reverse Voltage @
10 A (Volts)

Constant Forward Voltage @
10 mA (Volts)

Maximum 
Switching Time
@ 10 mA, 10 Volts(ns)

IP-SWITCH-3

0.02-0.04

3.0

40

0.75-0.92

15

IP-SWITCH-2

0.05-0.07

2.0

40

0.75-0.92

15

IP-SWITCH-1.5

0.08-0.12

1.5

40

0.75-0.92

15

IP-SWITCH-1

0.13-0.20

1.0

40

0.75-0.92

15

Absolute Maximum Ratings

 

Parameters, units

Value

Constant reverse voltage, V

42

Direct Current, mA

100

Power Dissipation, mW

150

 

Factors of influence            
Value
Elevated ambient        
85
temperature
nominal,           
125
maximal,                     
60
Reduced ambient temperature:
nominal,            
60
maximal,                          
Change of ambient
temperature:         
125
From maximal elevated, To  
60
nominal reduced, 

* The required total diode capacitance and switching time should be indicated when placing an order.

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